Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where quantum information processing outcomes depend on the location of a single electron on nearby quantum dots. In this paper we investigate various geometries of a SET in order to maximize the device's sensitivity to charge transfer between quantum dots. Through the use of finite element modeling we model the materials and geometries of an Al/Al2O3 SET measuring the state of quantum dots in the Si substrate beneath. The investigation is motivated by the quest to build a scalable quantum computer, though the methodology used is primarily that of circuit theory. As such we provide useful techniques for any electronic device operating at the classical/quantum interface.Comment: 13 pages, 17 figure

Self-aligned fabrication process for silicon quantum computer devices

We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal to use the nuclear spins of 31P donors in 28Si as qubits, controlled by metal surface gates and measured using single electron transistors (SETs). The accurate registration of 31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation

Molecular-beam epitaxy of CrSi_2 on Si(111)

Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)//Si(111) with CrSi_2[1120]//Si[101]. The latter case represents a 30° rotation of the CrSi_2 layer about the Si surface normal relative to the former case. Thick (210 nm) layers were grown by four different techniques, and the best‐quality layer was obtained by codeposition of Cr and Si at an elevated temperature. These layers are not single crystal; the largest grains are observed in a layer grown at 825 °C and are 1–2 μm across

Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture

We develop a theory for micro-Raman scattering by single and coupled two-donor states in silicon. We find the Raman spectra to have significant dependence on the donor exchange splitting and the relative spatial positions of the two donor sites. In particular, we establish a strong correlation between the temperature dependence of the Raman peak intensity and the interdonor exchange coupling. Micro-Raman scattering can therefore potentially become a powerful tool to measure interqubit coupling in the development of a Si quantum computer architecture.Comment: Title changed. Other minor change

A note on the calculation of the effective range

The closed form of the first order non-linear differential equation that is satisfied by the effective range within the variable phase formulation of scattering theory is discussed. It is shown that the conventional method of determining the effective range, by fitting a numerical solution of the Schr\"odinger equation to known asymptotic boundary conditions, can be modified to include the first order contribution of a long range interaction.Comment: 4 page

Defects Annealing of Si^+ Implanted GaAs at RT and 100°C

Annealing behavior of point defects near room temperature is studied by measuring the strain relaxation of Si+ implanted GaAs. Polished semi-insulating GaAs wafers were implanted with 300keV Si^+ at liquid nitrogen (LN_2) and room temperature (RT). The strain profile was obtained by the X-ray Double Crystal Diffraction (DCD) technique and kinematical fitting. The maximum strain of the samples stored at RT and elevated temperature 100°C in air, decreases with time, which indicates the reduction of point defects. Relaxation is exponential in time. At least two time constants of 0.24hrs and 24hrs are needed to fit the data, suggesting that two different processes are responsible for annealing defects. Time constants are obtained for different doses at RT and LN_2 implantation temperature, and found to be insensitive to both these quantities. The activation energy for defect migration is estimated using simple diffusion model